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C1384 Datasheet

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Transistor
2SC1383, 2SC1384
Silicon NPN epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SA683 and 2SA684
Features
Low collector to emitter saturation voltage V
Complementary pair with 2SA683 and 2SA684.
Absolute Maximum Ratings
Parameter
Symbol
Collector to
2SC1383
V
CBO
2SC1384
base voltage
2SC1383
Collector to
V
CEO
emitter voltage
2SC1384
Emitter to base voltage
V
EBO
Peak collector current
I
CP
Collector current
I
C
Collector power dissipation
P
C
Junction temperature
T
j
Storage temperature
T
stg
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base
2SC1383
voltage
2SC1384
Collector to emitter
2SC1383
voltage
2SC1384
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
h
Rank classification
FE1
Rank
Q
R
h
85 ~ 170
120 ~ 240
FE1
.
CE(sat)
(Ta=25˚C)
Ratings
Unit
30
V
60
25
V
50
5
V
1.5
A
1
A
1
W
150
˚C
–55 ~ +150
˚C
(Ta=25˚C)
Symbol
Conditions
I
V
= 20V, I
= 0
CBO
CB
E
V
I
= 10 A, I
= 0
CBO
C
E
V
I
= 2mA, I
= 0
CEO
C
B
V
I
= 10 A, I
= 0
EBO
E
C
*1
*2
h
V
= 10V, I
= 500mA
FE1
CE
C
*2
h
V
= 5V, I
= 1A
FE2
CE
B
*2
V
I
= 500mA, I
= 50mA
CE(sat)
C
B
*2
V
I
= 500mA, I
= 50mA
BE(sat)
C
B
f
V
= 10V, I
= –50mA, f = 200MHz
T
CB
E
C
V
= 10V, I
= 0, f = 1MHz
ob
CB
E
S
170 ~ 340
Unit: mm
5.9 0.2
4.9 0.2
0.7 0.1
2.54 0.15
+0.2
+0.2
0.45
0.45
–0.1
–0.1
1.27
1.27
1:Emitter
2:Collector
1
2
3
3:Base
EIAJ:SC–51
TO–92L Package
min
typ
max
Unit
0.1
A
30
V
60
25
V
50
5
V
85
160
340
50
100
0.2
0.4
V
0.85
1.2
V
200
MHz
11
20
pF
*2
Pulse measurement
1

Summary of Contents

Page 1

... Transistor 2SC1383, 2SC1384 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SA683 and 2SA684 Features Low collector to emitter saturation voltage V Complementary pair with 2SA683 and 2SA684. Absolute Maximum Ratings Parameter Symbol Collector to 2SC1383 V CBO 2SC1384 ...

Page 2

... A ) Collector current — f1MHz Ta25˚ 100 ( V ) Collector to base voltage V CB 2SC1383, 2SC1384 I — 1.2 V 10V CE Ta25C 1.0 0.8 0.6 0.4 0 Base current — 600 V 10V CE ...

Page 3

... Transistor I Ta CEO 10V 100 120 140 160 Ambient temperature Ta ( C ) Area of safe operation (ASO) 10 Single pulse Ta25˚ t10ms 0.3 t1s 0.1 0.03 0.01 0.003 0.001 0.1 0 100 ( V ) Collector to emitter voltage V CE 2SC1383, 2SC1384 3 ...

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