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K10A60D Datasheet

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
Switching Regulator Applications
Low drain-source ON-resistance: R
High forward transfer admittance: |Y
= 10 μA (V
Low leakage current: I
DSS
Enhancement mode: V
= 2.0 to 4.0 V (V
th
Absolute Maximum Ratings
Characteristics
Drain-source voltage
= 20 kΩ)
Drain-gate voltage (R
GS
Gate-source voltage
DC
(Note 1)
Drain current
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Note 1: Ensure that the channel temperature does not exceed 150℃.
= 90 V, T
= 25°C (initial), L = 6.36 mH, R
Note 2: V
DD
ch
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
TK10A60D
= 0.62 Ω (typ.)
DS (ON)
| = 6.0 S (typ.)
fs
= 600 V)
DS
= 10 V, I
= 1 mA)
DS
D
(Ta = 25°C)
Symbol
Rating
Unit
V
600
V
DSS
V
600
V
DGR
±30
V
V
GSS
I
10
D
A
I
40
DP
P
45
W
D
E
363
mJ
AS
I
10
A
AR
E
4.5
mJ
AR
T
150
°C
ch
T
-55 to 150
°C
stg
Symbol
Max
Unit
R
2.78
°C/W
th (ch-c)
R
62.5
°C/W
th (ch-a)
= 25 Ω, I
= 10 A
G
AR
1
TK10A60D
Unit: mm
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
2
1
3
2009-09-29

Summary of Contents

Page 1

... D E 363 4 150 ° -55 to 150 °C stg Symbol Max Unit R 2.78 °C/W th (ch-c) R 62.5 °C/W th (ch- Ω TK10A60D www.DataSheet4U.com Unit Gate 2: Drain 3: Source JEDEC JEITA SC-67 TOSHIBA 2-10U1B Weight : 1.7 g (typ 2009-09-29 ...

Page 2

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 TK10A60D www.DataSheet4U.com Min Typ. Max ...

Page 3

... DRAIN-SOURCE VOLTAGE (V) GATE-SOURCE VOLTAGE V 10 COMMON SOURCE Tc 25°C PULSE TEST V15V 0.1 100 0.1 DRAIN CURRENT I 3 TK10A60D www.DataSheet4U.com I – COMMON SOURCE 25°C 7.5 7 PULSE TEST 6.75 6 V ...

Page 4

... PULSE TEST 0 80 40 100 (V) CASE TEMPERATURE Tc (°C) DYNAMIC INPUT / OUTPUT CHARACTERISTICS 500 V DS 400 300 200 100 0 200 0 10 TOTAL GATE CHARGE Q 4 TK10A60D www.DataSheet4U.com I – − 0.6 0.8 1.0 1.2 1.4 ( – ...

Page 5

... PULSE WIDTH t (s) w 500 400 300 200 100 CHANNEL TEMPERATURE (INITIAL 1000 (V) 15 V TEST CIRCUIT 25 Ω 6.36mH TK10A60D www.DataSheet4U.com – 100 125 150 T (° VDSS WAVEFORM ⎛ ...

Page 6

... Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 TK10A60D www.DataSheet4U.com 2009-09-29 ...

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