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STK0760P Datasheet - Page 3

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Electrical Characteristics
Characteristic
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Forward transfer conductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Source-Drain Diode Ratings and Characteristics
Characteristic
Source current
Source current (Pulsed)
Forward voltage
Reverse recovery time
Reverse recovery charge
Note ;
① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
② L=9.8mH, I
=7A, V
AS
DD
③ Pulse Test : Pulse Width< 300us, Duty cycle≤ 2%
④ Essentially independent of operating temperature
Symbol
Test Condition
BV
I
=250µA, V
DSS
D
V
I
=250µA, V
D
GS(th)
I
V
=600V, V
DSS
DS
I
V
=0V, V
GSS
DS
R
V
=10V, I
DS(ON)
GS
g
V
=10V, I
fs
DS
Ciss
V
=0V, V
GS
f=1MHz
Coss
Crss
t
d(on)
V
=300V, I
t
DD
r
R
=25Ω
G
t
d(off)
t
f
Q
g
V
=300V, V
DS
Q
I
=7A
gs
D
Q
gd
Symbol
Test Condition
I
Integral reverse diode
S
in the MOSFET
I
SM
V
V
=0V, I
SD
GS
t
I
=7A, V
rr
s
GS
di
/dt=100A/us
Q
S
rr
=50V, R
=27Ω
G
KSD-T0P002-000
STK0760P
Min.
Typ.
=0
600
-
GS
= V
2.0
-
DS
GS
=0V
-
-
GS
=±30V
-
-
GS
=3.5A
-
1.0
D
=3.5A
-
7.3
D
-
950
=25V,
DS
-
85
-
12
-
16
=7A
D
-
60
-
80
-
65
-
28
=10V
GS
-
5.5
-
11
Min
Typ
-
-
-
-
=7A
-
-
S
-
365
=0
-
4.23
(Tc=25°C)
Max.
Unit
-
V
4.0
V
1
µA
±100
nA
1.2
-
S
1430
pF
130
18
-
-
ns
-
-
42
8.3
nC
17
(Tc=25°C)
Max
Unit
7
A
28
1.4
V
-
ns
-
uC
3

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