Datasheets»AUK Corporation»STK0765 Datasheet

STK0765 Datasheet - Page 2

Download or read online AUK Corporation STK0765 Advanced N-Ch Power MOSFET pdf datasheet.



Page
2 of 8
prevnext
Electrical Characteristics
Characteristic
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Forward transfer conductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Source-Drain Diode Ratings and Characteristics
Characteristic
Continuous source current
Pulsed-source current
Forward voltage
Reverse recovery time
Reverse recovery charge
Note ;
① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
② L=10mH, I
=7A, V
=50V, R
AS
DD
③ Pulse Test : Pulse Width< 300us, Duty cycle≤ 2%
④ Essentially independent of operating temperature
Symbol
Test Condition
BV
I
=250μA, V
DSS
D
V
I
=250μA, V
GS(th)
D
I
V
=650V, V
DSS
DS
I
V
=0V, V
GSS
DS
GS
R
V
=10V, I
DS(ON)
GS
D
g
V
=10V, I
fs
DS
D
Ciss
V
=0V, V
GS
DS
Coss
Crss
t
d(on)
V
=300V, I
t
DD
r
R
=25Ω
G
t
d(off)
t
f
Q
g
V
=300V, V
DS
I
=7A
Q
D
gs
Q
gd
Symbol
Test Condition
I
Integral reverse diode
S
in the MOSFET
I
SM
V
V
=0V, I
=7A
SD
GS
S
t
I
=7A, V
=0
rr
s
GS
dI
/dt=100A/us
Q
S
rr
=25Ω , starting T
=25℃
G
J
KSD-T0O016-004
STK0765BF
Min.
Typ.
=0
650
-
GS
= V
2.0
-
DS
GS
=0V
-
-
GS
=±30V
-
-
=3.5A
-
1.2
=3.5A
-
8.1
-
974
=25V, f=1MHz
-
105
-
13
-
18
=7A
D
-
19
-
72
-
28
-
32
=10V
GS
-
6.5
-
11
Min
Typ
-
-
-
-
-
-
-
648
-
4.8
(Tc=25°C)
Max.
Unit
-
V
4.0
V
1
μA
±100
nA
1.6
Ω
-
S
1460
236
pF
20
-
-
ns
-
-
48
9.8
nC
17
(Tc=25°C)
Max
Units
7
A
28
1.4
V
-
ns
-
uC
2

Comments to this Datasheet