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SLD302V Datasheet

Download or read online Sony Electronics SLD302V 200mW High Power Laser Diode pdf datasheet.



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200mW High Power Laser Diode
Description
The SLD302V is a gain-guided, high-power laser
diodes fabricated by MOCVD.
MOCVD: Metal Organic Chemical Vapor Deposition
Features
• High power
Recommended power output
• Low operating current
Applications
• Solid state laser excitation
• Medical use
Structure
GaAlAs double-hetero-type laser diode
Operating Lifetime
MTTF 10,000H (effective value) at Po = 180mW, Tc = 25°C
Absolute Maximum Ratings (Tc = 25°C)
• Optical power output
Pomax
• Reverse voltage
V
R
• Operating temperature
Topr
• Storage temperature
Tstg
Warranty
This warranty period shall be 90 days after receipt of the product or 1,000 hours operation time whichever is
shorter.
Sony Quality Assurance Department shall analyze any product that fails during said warranty period, and if the
analysis results show that the product failed due to material or manufacturing defects on the part of Sony, the
product shall be replaced free of charge.
Laser diodes naturally have differing lifetimes which follow a Weibull distribution.
Special warranties are also available.
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
Po = 180mW
Pin Configuration
200
mW
LD
2
V
PD
15
V
–10 to +50
°C
–40 to +85
°C
– 1 –
SLD302V
M-248
2
1
3
1. LD cathode
2. PD anode
3. COMMON
Bottom View
E88060D19-PS

Summary of Contents

Page 1

... High Power Laser Diode Description The SLD302V is a gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features High power Recommended power output Low operating current Applications Solid state laser excitation Medical use ...

Page 2

... Full Width at Half Maximum 1 Wavelength Selection Classification Type Wavelength (nm) SLD302V-1 785 ± 15 SLD302V-2 810 ± 10 SLD302V-3 830 ± 10 Type Wavelength (nm) SLD302V-21 798 ± 3 SLD302V-24 807 ± 3 SLD302V-25 810 ± 3 Min. Conditions Symbol Ith Iop P 180mW O Vop P 180mW 180mW ...

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... 0.1 Imon Monitor current [mA] Power dependence of far field pattern (parallel to junction 180mW 90mW 30mW O 30 20 Angle [degree Case temperature [ C] SLD302V 0 180mW 50 ...

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... Differential efficiency vs. Temperature characteristics 1.5 1.0 0.5 0 Case temperature [ 4 Power dependence of polarization ratio 50 100 150 200 Po Optical power output [mW] SLD302V 250 ...

Page 5

... Power dependence of wavelength 800 805 Wavelength [nm] 800 805 Wavelength [nm] 800 805 Wavelength [nm 40mW 810 800 120mW 810 800 200mW 810 5 SLD302V 80mW 805 810 Wavelength [nm 160mW 805 810 Wavelength [nm] ...

Page 6

... Temperature dependence of wavelength (Po 180mW) 805 815 Wavelength [nm] 805 815 Wavelength [nm] 805 815 Wavelength [nm 6 C 825 805 825 805 825 6 SLD302V 815 825 Wavelength [nm 815 825 Wavelength [nm] ...

Page 7

... LASER DIODE AVOID EXPOSURE Laser radiation is OVER 1 W emitted from this 600 - 950 nm aperture. 7 SLD302V LASER DIODE This product complies with 21 CFR Part 1040.10 and 1040.11 Sony Corporation 6-7-35 Kitashinagawa, Shinagawa-ku,Tokyo 141-0001 Japan ...

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... Package Outline Unit: mm Optical Distance 2.55 ± 0.05 SONY CODE EIAJ CODE JEDEC CODE M-248 (LO-11) Reference Slot 1 Photo Diode 0 9.0 0.015 7.7 MAX 6.9 MAX Window Glass 3.5 Reference Plane LD Chip 3 0.45 PCD 2.54 M-248 PACKAGE MASS 8 SLD302V 1.2g Sony Corporation ...

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