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SLD322V Datasheet

Download or read online Sony Electronics SLD322V High Power Density 0.5W Laser Diode pdf datasheet.



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High Power Density 0.5W Laser Diode
Description
The SLD322V is a high power, gain-guided laser
diode produced by MOCVD method
the SLD300 Series, this laser diode has a high
brightness output with a doubled optical density which
can be achieved by QW-SCH structure
1
MOCVD: Metal Organic Chemical Vapor Deposition
2
QW-SCH: Quantum Well Separate Confinement
Heterostructure
Features
• High power
Recommended optical power output: Po = 0.5W
• Low operating current: Iop = 0.75A (Po = 0.5W)
Applications
• Solid state laser excitation
• Medical use
• Material processes
• Measurement
Structure
GaAlAs quantum well structure laser diode
Operating Lifetime
MTTF 10,000H (effective value) at Po = 0.5W, Tc = 25°C
Absolute Maximum Ratings (Tc = 25°C)
• Optical power output
Pomax
• Reverse voltage
V
R
• Operating temperature (Tc) Topr
• Storage temperature
Tstg
Warranty
This warranty period shall be 90 days after receipt of the product or 1,000 hours operation time whichever is
shorter.
Sony Quality Assurance Department shall analyze any product that fails during said warranty period, and if the
analysis results show that the product failed due to material or manufacturing defects on the part of Sony, the
product shall be replaced free of charge.
Laser diodes naturally have differing lifetimes which follow a Weibull distribution.
Special warranties are also available.
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
1
. Compared to
2
.
Pin Configuration
0.55
W
LD
2
V
PD
15
V
–10 to +30
°C
–40 to +85
°C
– 1 –
SLD322V
M-248
2
1
3
1. LD cathode
2. PD anode
3. COMMON
Bottom View
E93205C19-PS

Summary of Contents

Page 1

... High Power Density 0.5W Laser Diode Description The SLD322V is a high power, gain-guided laser diode produced by MOCVD method the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be achieved by QW-SCH structure 1 MOCVD: Metal Organic Chemical Vapor Deposition ...

Page 2

... Full Width at Half Maximum 1 Wavelength Selection Classification Type Wavelength (nm) SLD322V-1 795 ± 5 SLD322V-2 810 ± 10 SLD322V-3 830 ± 10 Type Wavelength (nm) SLD322V-21 798 ± 3 SLD322V-24 807 ± 3 SLD322V-25 810 ± 3 Min. Conditions Symbol Ith Iop P 0.5W O Vop 0.5W 790 ...

Page 3

... C C 0.5 1.0 Imon Monitor current [mA 500mW 400mW 300mW 200mW 100mW O 60 Angle [degree] (Parallel to junction 500mW – 60 Angle [degree] SLD322V ...

Page 4

... Angle [degree] Differential efficiency vs. Temperature characteristics 1.0 0.5 0 Case temperature [ C] 820 P 500mW O 810 800 – 790 60 90 4 SLD322V Dependence of wavelength Po 500mW Case temperature [ C] ...

Page 5

... Power dependence of spectrum 1 0.2W 0.8 0.6 0.4 0.2 796 798 800 Wavelength [nm] 1 0.4W 0.8 0.6 0.4 0.2 796 798 800 Wavelength [nm] 1.0 0.8 0.6 0.4 0.2 802 804 1.0 0.8 0.6 0.4 0.2 802 804 5 – 0.3W 796 798 800 802 804 Wavelength [nm 0.5W 796 798 800 802 804 Wavelength [nm] SLD322V ...

Page 6

... Wavelength [nm] 1.0 0.8 0.6 0.4 0.2 785 790 795 800 Wavelength [nm] 1 10 C 0.8 0.6 0.4 0.2 805 810 815 1 0.8 0.6 0.4 0.2 805 810 815 6 – 785 790 795 800 805 Wavelength [nm 785 790 795 800 805 Wavelength [nm] SLD322V 810 815 810 815 ...

Page 7

... LASER DIODE AVOID EXPOSURE Laser radiation is OVER 1 W emitted from this 600 - 950 nm aperture. 7 SLD322V LASER DIODE This product complies with 21 CFR Part 1040.10 and 1040.11 Sony Corporation 6-7-35 Kitashinagawa, Shinagawa-ku,Tokyo 141-0001 Japan ...

Page 8

... Package Outline Unit: mm Optical Distance 2.55 ± 0.05 SONY CODE EIAJ CODE JEDEC CODE M-248 (LO-11) Reference Slot 1 Photo Diode 0 9.0 0.015 7.7 MAX 6.9 MAX Window Glass 3.5 Reference Plane LD Chip 3 0.45 PCD 2.54 PACKAGE MASS M-248 8 SLD322V 1.2g Sony Corporation ...

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