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BF992,215 Datasheet

Download or read online NXP Semiconductors BF992,215 Transistors RF MOSFET Small Signal N-CH DUAL GATE 20V VHF pdf datasheet.



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BF992
Silicon N-channel dual gate MOS-FET
Rev. 04 — 21 November 2007
IMPORTANT NOTICE
Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name
- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
shown below.
http://www.philips.semiconductors.com use http://www.nxp.com
http://www.semiconductors.philips.com use http://www.nxp.com (Internet)
sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com
(email)
The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved -
is replaced with:
- © NXP B.V. (year). All rights reserved. -
If you have any questions related to the data sheet, please contact our nearest sales
office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your
cooperation and understanding,
NXP Semiconductors
Product data sheet
Specifications of NXP Semiconductors BF992,215
Application:
VHF
Channel Mode:
Depletion
Channel Type:
N
Configuration:
Single Dual Gate
Continuous Drain Current:
0.04 A
Current - Test:
15mA
Current Rating:
40mA
Drain Source Voltage (max):
20V
Drain-source Breakdown Voltage:
20 V
Frequency:
200MHz
Gain:
-
Gate-source Breakdown Voltage:
+/- 8 V
ID_COMPONENTS:
1949195
Input Capacitance (typ)@vds:
4@10V@Gate 1/1.7@10V@Gate 2pF
Lead Free Status / Rohs Status:
Lead free / RoHS Compliant
Maximum Operating Temperature:
+ 150 C
Minimum Operating Temperature:
- 65 C
Mounting:
Surface Mount
Mounting Style:
SMD/SMT
Noise Figure:
1.2dB
Noise Figure (max):
1.2(Typ)dB
Number Of Elements:
1
Operating Temp Range:
-65C to 150C
Output Capacitance (typ)@vds:
2@10VpF
Package / Case:
SOT-143, SOT-143B, TO-253AA
Package Type:
SOT
Pin Count:
3 +Tab
Power - Output:
-
Power Dissipation:
200 mW
Power Dissipation (max):
200mW
Reverse Capacitance (typ):
0.03@10VpF
Screening Level:
Military
Series:
-
Transistor Polarity:
N-Channel
Transistor Type:
N-Channel Dual Gate
Voltage - Rated:
20V
Voltage - Test:
10V
Product Category:
Transistors RF MOSFET Small Signal
RoHS:
yes
Drain-Source Breakdown Voltage:
20 V
Gate-Source Breakdown Voltage:
+/- 8 V
Factory Pack Quantity:
3000
Part # Aliases:
BF992 T/R
Other Names:
568-1971-2, 933615000215, BF992 T/R

Summary of Contents

Page 1

... Rev. 04 21 November 2007 IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below ...

Page 2

NXP Semiconductors Silicon N-channel dual gate MOS-FET APPLICATIONS VHF applications such as VHF television tuners and FM tuners with 12 V supply voltage. The device is also suitable for use in professional communications equipment. DESCRIPTION Depletion type field-effect transistor in ...

Page 3

NXP Semiconductors Silicon N-channel dual gate MOS-FET LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V drain-source voltage DS I drain current D I gate 1 current G1 I gate 2 current G2 P ...

Page 4

NXP Semiconductors Silicon N-channel dual gate MOS-FET THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to ambient in free air th j-a Note 1. Device mounted on a ceramic substrate STATIC CHARACTERISTICS unless otherwise ...

Page 5

NXP Semiconductors Silicon N-channel dual gate MOS-FET 24 handbook, halfpage I D (mA G2-S j Fig.3 Output characteristics; typical values. 30 handbook, ...

Page 6

NXP Semiconductors Silicon N-channel dual gate MOS-FET 2 10 handbook, halfpage y is (mS mA G2-S ...

Page 7

NXP Semiconductors Silicon N-channel dual gate MOS-FET PACKAGE OUTLINE Plastic surface mounted package; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.48 0.88 0.1 mm ...

Page 8

NXP Semiconductors Legal information Data sheet status [1][2] Document status Product status Objective [short] data sheet Development Preliminary [short] data sheet Qualification Product [short] data sheet Production [1] Please consult the most recently issued document before initiating or completing a ...

Page 9

NXP Semiconductors Revision history Revision history Document ID Release date BF992_N_4 20071121 Modifications: Fig page 2; Figure note changed BF992_3 19990811 (9397 750 06013) BF992_2 19960730 BF992_SF_1 - Silicon N-channel dual gate MOS-FET Data sheet status Change ...

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