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BF998 Datasheet - Page 9

Download or read online NXP Semiconductors BF998 Depletion type Field-Effect Transistor in a plastic SOT143 package pdf datasheet.



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NXP Semiconductors
Silicon N-channel dual-gate MOS-FETs
V DD
handbook, full pagewidth
100 kΩ
L1
1 nF
50 Ω
input
V
= 12 V; G
= 3.3 mS; G
= 1 mS.
DD
S
L
L1 = L4 = 200 nH; 11 turns 0.5 mm copper wire, without spacing, internal diameter 3 mm.
L2 = 2 cm, silvered 0.8 mm copper wire, 4 mm above ground plane.
L3 = 2 cm, silvered 0.5 mm copper wire, 4 mm above ground plane.
1996 Aug 01
V agc
1 nF
140 kΩ
1 nF
270 kΩ
1 nF
L2
C1
C2
2 to 18 pF
0.5 to 3.5 pF
1.8 kΩ
V DD
Fig.18 Gain control test circuit at f = 800 MHz.
9
BF998; BF998R
V DD
1 nF
L4
L3
1 nF
C3
C4
1 nF
0.5 to
4 to 40 pF
3.5 pF
360 Ω
Product specification
50 Ω
output
MGE801

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