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BF998 Datasheet - Page 8

Download or read online NXP Semiconductors BF998 Depletion type Field-Effect Transistor in a plastic SOT143 package pdf datasheet.



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NXP Semiconductors
Silicon N-channel dual-gate MOS-FETs
handbook, full pagewidth
C1
5.5 pF
50 Ω
input
140 kΩ
V DD
V
= 12 V; G
= 2 mS; G
= 0.5 mS.
DD
S
L
L1 = 45 nH; 4 turns 0.8 mm copper wire, internal diameter 4 mm.
L2 = 160 nH; 3 turns 0.8 mm copper wire, internal diameter 8 mm.
Tapped at approximately half a turn from the cold side, to adjust G
1996 Aug 01
V agc
1 nF
47 kΩ
1 nF
15 pF
L1
1 nF
D1
330 kΩ
BB405
100 kΩ
1 nF
V tun
input
= 0.5 mS. C1 adjusted for G
L
Fig.17 Gain control test circuit at f = 200 MHz.
8
Product specification
BF998; BF998R
V DD
47 μF
1 nF
20 μH
1 nF
1 nF
50 Ω
1.8 kΩ
output
L2
1 nF
360 Ω
10 pF
D2
330 kΩ
BB405
1 nF
V tun
output
MGE802
= 2 mS.
S

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