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BF998 Datasheet - Page 7

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NXP Semiconductors
Silicon N-channel dual-gate MOS-FETs
10
y is
(mS)
1
1
10
2
10
10
10
V
= 8 V; V
= 4 V; I
= 10 mA; T
DS
G2-S
D
amb
Fig.13 Input admittance as a function of the
frequency; typical values.
2
10
y fs
y fs
(mS)
ϕ
10
1
2
10
10
V
= 8 V; V
= 4 V; I
= 10 mA; T
DS
G2-S
D
amb
Fig.15 Forward transfer admittance and phase as a
function of frequency; typical values.
1996 Aug 01
MGC466
b is
g is
2
3
10
f (MHz)
= 25 C.
MGC468
2
10
ϕ
fs
(deg)
10
fs
1
3
10
f (MHz)
= 25 C.
7
BF998; BF998R
3
10
y rs
(μS)
ϕ
rs
2
10
y rs
10
1
2
10
10
= 25 C.
V
= 8 V; V
= 4 V; I
= 10 mA; T
DS
G2-S
D
amb
Fig.14 Reverse transfer admittance and phase as a
function of frequency; typical values.
10
y os
(mS)
1
1
10
2
10
2
10
10
= 25 C.
V
= 8 V; V
= 4 V; I
= 10 mA; T
DS
G2-S
D
amb
Fig.16 Output admittance as a function of the
frequency; typical values.
Product specification
MGC467
3
10
ϕ
rs
(deg)
2
10
10
1
3
10
f (MHz)
MGC469
b os
g os
3
10
f (MHz)

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