Datasheets»NXP Semiconductors»BF998 Datasheet

BF998 Datasheet - Page 6

Download or read online NXP Semiconductors BF998 Depletion type Field-Effect Transistor in a plastic SOT143 package pdf datasheet.



Page
6 of 15
prevnext
NXP Semiconductors
Silicon N-channel dual-gate MOS-FETs
30
handbook, halfpage
|y fs |
(mS)
24
18
12
6
0
−1
0
= 25 C.
V
= 8 V; T
DS
amb
Fig.9
Forward transfer admittance as a function of
gate 1 voltage; typical values.
2.3
handbook, halfpage
C is
(pF)
2.1
1.9
1.7
1.5
1.3
−2.4
−1.6
−0.8
V
= 8 V; V
= 4 V; f = 1 MHz; T
DS
G2-S
amb
Fig.11 Gate 1 input capacitance as a function of
gate 1-source voltage; typical values.
1996 Aug 01
MGE812
handbook, halfpage
V G2-S = 4 V
3 V
2 V
1 V
0 V
1
V G1 (V)
V
MGE809
handbook, halfpage
0
0.8
V G1-S (V)
= 25 C.
V
6
BF998; BF998R
1.5
C os
(pF)
1.4
1.3
1.2
1.1
1.0
4
6
8
10
= 25 C.
= 4 V; f = 1 MHz; T
G2-S
amb
Fig.10 Output capacitance as a function of
drain-source voltage; typical values.
2.4
C is
(pF)
2.3
2.2
2.1
2.0
6
4
2
= 25 C.
= 8 V; V
= 0 V; f = 1 MHz; T
DS
G1-S
amb
Fig.12 Gate 1 input capacitance as a function of
gate 2-source voltage; typical values.
Product specification
MGE810
12 mA
10 mA
8 mA
12
14
V DS (V)
MBH479
−2
0
V G2−S (V)

Comments to this Datasheet