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BF998 Datasheet - Page 5

Download or read online NXP Semiconductors BF998 Depletion type Field-Effect Transistor in a plastic SOT143 package pdf datasheet.



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NXP Semiconductors
Silicon N-channel dual-gate MOS-FETs
24
handbook, halfpage
I D
(mA)
20
16
12
8
4
0
0
2
4
= 25 C.
V
= 4 V; T
G2-S
amb
Fig.5 Output characteristics; typical values.
24
handbook, halfpage
I D
(mA)
20
16
12
8
4
0
−1600
−1200
−800
= 25 C.
V
= 8 V; V
= 4 V; T
DS
G2-S
amb
Fig.7
Drain current as a function of gate 1
voltage; typical values.
1996 Aug 01
MGE813
handbook, halfpage
V G1-S =
0.4 V
0.3 V
0.2 V
0.1 V
0 V
−0.1 V
−0.2 V
−0.3 V
−0.4 V
−0.5 V
6
8
10
V DS (V)
MGE814
handbook, halfpage
max
typ
min
−400
0
400
V G1 (mV)
5
BF998; BF998R
24
I D
(mA)
V G2-S = 4 V
20
16
12
8
4
0
−1
0
= 25 C.
V
= 8 V; T
DS
amb
Fig.6 Transfer characteristics; typical values.
30
|y fs |
(mS)
24
18
12
6
V G2-S = 0 V
0
0
4
8
12
= 25 C.
V
= 8 V; T
DS
amb
Fig.8
Forward transfer admittance as a function of
drain current; typical values.
Product specification
MGE815
3 V
2 V
1 V
0 V
1
V G1 (V)
MGE811
4 V
3 V
2 V
1 V
0.5 V
16
20
I D (mA)

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