Datasheets»NXP Semiconductors»BF998 Datasheet

BF998 Datasheet - Page 4

Download or read online NXP Semiconductors BF998 Depletion type Field-Effect Transistor in a plastic SOT143 package pdf datasheet.



Page
4 of 15
prevnext
NXP Semiconductors
Silicon N-channel dual-gate MOS-FETs
THERMAL CHARACTERISTICS
SYMBOL
R
thermal resistance from junction to ambient in free air; BF998
th j-a
R
thermal resistance from junction to ambient in free air; BF998R note 1
th j-a
Notes
1. Device mounted on a ceramic substrate, 8 mm  10 mm  0.7 mm.
2. Device mounted on a printed-circuit board.
STATIC CHARACTERISTICS
= 25 C; unless otherwise specified.
T
j
SYMBOL
PARAMETER
V
gate 1-source breakdown voltage
(BR)G1-SS
V
gate 2-source breakdown voltage
(BR)G2-SS
V
gate 1-source cut-off voltage
(P)G1-S
V
gate 2-source cut-off voltage
(P)G2-S
I
drain-source current
DSS
I
gate 1 cut-off current
G1-SS
I
gate 2 cut-off current
G2-SS
Note
1. Measured under pulse condition.
DYNAMIC CHARACTERISTICS
= 25 C; V
Common source; T
amb
SYMBOL
PARAMETER
y
forward transfer admittance
fs
C
input capacitance at gate 1
ig1-s
C
input capacitance at gate 2
ig2-s
C
output capacitance
os
C
reverse transfer capacitance
rs
F
noise figure
1996 Aug 01
PARAMETER
V
= V
G2-S
DS
V
= V
G1-S
DS
V
= 4 V; V
G2-S
V
= 0; V
G1-S
DS
V
= 4 V; V
G2-S
V
= V
G2-S
DS
V
= V
G1-S
DS
= 8 V; V
= 4 V; I
= 10 mA.
DS
G2-S
D
CONDITIONS
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 200 MHz; G
= 2 mS; B
S
f = 800 MHz; G
= 3.3 mS; B
S
4
BF998; BF998R
CONDITIONS
note 1
note 2
CONDITIONS
MIN.
= 10 mA
= 0; I
6
G1-SS
= 10 mA
= 0; I
6
G2-SS
= 20 A
= 8 V; I
DS
D
= 20 A
= 8 V; I
D
= 8 V; V
= 0; note 1
2
DS
G1-S
= 5 V
= 0; V
G1-S
= 5 V
= 0; V
G2-S
MIN.
TYP.
21
24
2.1
1.2
1.05
25
= B
0.6
S
Sopt
= B
1.0
S
Sopt
Product specification
VALUE
UNIT
460
K/W
500
K/W
500
K/W
MAX.
UNIT
20
V
20
V
2.0
V
1.5
V
18
mA
50
nA
50
nA
MAX.
UNIT
mS
2.5
pF
pF
pF
fF
dB
dB

Comments to this Datasheet