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BF998 Datasheet - Page 3

Download or read online NXP Semiconductors BF998 Depletion type Field-Effect Transistor in a plastic SOT143 package pdf datasheet.



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NXP Semiconductors
Silicon N-channel dual-gate MOS-FETs
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
V
drain-source voltage
DS
I
drain current
D
I
gate 1 current
G1
I
gate 2 current
G2
P
total power dissipation; BF998
tot
P
total power dissipation; BF998R up to T
tot
T
storage temperature
stg
T
operating junction temperature
j
Notes
1. Device mounted on a ceramic substrate, 8 mm  10 mm  0.7 mm.
2. Device mounted on a printed-circuit board.
handbook, halfpage
200
(2)
(1)
P tot max
(mW)
100
0
0
100
(1) Ceramic substrate.
(2) Printed-circuit board.
Fig.3 Power derating curves; BF998.
1996 Aug 01
CONDITIONS
= 60 C; see Fig.3; note 1 
up to T
amb
= 50 C; see Fig.3; note 2 
up to T
amb
= 50 C; see Fig.4; note 1 
amb
MLA198
handbook, halfpage
P tot max
(mW)
200
o
T amb ( C)
3
Product specification
BF998; BF998R
MIN.
MAX.
12
30
10
10
200
200
200
65
+150
150
200
100
0
0
100
T amb (°C)
Fig.4 Power derating curve; BF998R.
UNIT
V
mA
mA
mA
mW
mW
mW
C
C
MGA002
200

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