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BF998 Datasheet - Page 2

Download or read online NXP Semiconductors BF998 Depletion type Field-Effect Transistor in a plastic SOT143 package pdf datasheet.



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NXP Semiconductors
Silicon N-channel dual-gate MOS-FETs
FEATURES
 Short channel transistor with high forward transfer
admittance to input capacitance ratio
 Low noise gain controlled amplifier up to 1 GHz.
APPLICATIONS
 VHF and UHF applications with 12 V supply voltage,
such as television tuners and professional
communications equipment.
DESCRIPTION
Depletion type field effect transistor in a plastic
microminiature SOT143B or SOT143R package with
source and substrate interconnected. The transistors are
protected against excessive input voltage surges by
integrated back-to-back diodes between gates and
source.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
PINNING
PIN
SYMBOL
1
s, b
source
2
d
drain
3
g
gate 2
2
4
g
gate 1
1
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V
drain-source voltage
DS
I
drain current
D
P
total power dissipation
tot
y
forward transfer admittance
fs
C
input capacitance at gate 1
ig1-s
C
reverse transfer capacitance
rs
F
noise figure
T
operating junction temperature
j
1996 Aug 01
handbook, halfpage
Marking code: MOp.
handbook, halfpage
DESCRIPTION
Marking code: MOp.
CONDITIONS
f = 1 MHz
f = 800 MHz
2
Product specification
BF998; BF998R
4
3
g 2
1
2
Top view
MAM039
Fig.1
Simplified outline (SOT143B)
and symbol; BF998.
3
4
g
g 1
2
1
Top view
MAM040
Fig.2
Simplified outline (SOT143R)
and symbol; BF998R.
TYP.
MAX.
12
30
200
24
2.1
25
1
150
d
g 1
s,b
d
2
s,b
UNIT
V
mA
mW
mS
pF
fF
dB
C

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