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BF998 Datasheet - Page 10

Download or read online NXP Semiconductors BF998 Depletion type Field-Effect Transistor in a plastic SOT143 package pdf datasheet.



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NXP Semiconductors
Silicon N-channel dual-gate MOS-FETs
0
handbook, halfpage
ΔG tr
(dB)
−10
−20
−30
I DSS =
−40
max
typ
min
−50
0
2
4
= 25 C.
V
= 12 V; f = 200 MHz; T
DD
amb
Fig.19 Automatic gain control characteristics
measured in circuit of Fig.17.
1996 Aug 01
MGE808
handbook, halfpage
6
8
10
V agc (V)
V
10
BF998; BF998R
0
ΔG tr
(dB)
I DSS =
−10
max
typ
min
−20
−30
−40
−50
0
2
4
6
= 25 C.
= 12 V; f = 800 MHz; T
DD
amb
Fig.20 Automatic gain control characteristics
measured in circuit of Fig.18.
Product specification
MGE807
8
10
V agc (V)

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