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BF998WRT/R Datasheet

Download or read online NXP Semiconductors BF998WRT/R 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET pdf datasheet.



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DATA SHEET
BF998WR
N-channel dual-gate MOS-FET
Product specification
Supersedes data of 1995 Apr 25
DISCRETE SEMICONDUCTORS
1997 Sep 05
Specifications of NXP Semiconductors BF998WRT/R
Mfr Package Description:
MICRO MINIATURE, PLASTIC PACKAGE-4
Lead Free:
Yes
EU RoHS Compliant:
Yes
China RoHS Compliant:
Yes
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Surface Mount:
Yes
Terminal Form:
GULL WING
Terminal Finish:
TIN
Terminal Position:
DUAL
Number of Terminals:
4
Package Body Material:
PLASTIC/EPOXY
Configuration:
SINGLE WITH BUILT-IN DIODE
Case Connection:
SOURCE
Number of Elements:
2
Transistor Application:
AMPLIFIER
Transistor Element Material:
SILICON
Power Dissipation Ambient-Max:
0.3000 W
Channel Type:
N-CHANNEL
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Operating Mode:
DUAL GATE, DEPLETION
Transistor Type:
RF SMALL SIGNAL
Drain Current-Max (ID):
0.0300 A
Highest Frequency Band:
ULTRA HIGH FREQUENCY BAND
DS Breakdown Voltage-Min:
12 V

Summary of Contents

Page 1

DATA SHEET BF998WR N-channel dual-gate MOS-FET Product specification Supersedes data of 1995 Apr 25 DISCRETE SEMICONDUCTORS 1997 Sep 05 ...

Page 2

... NXP Semiconductors N-channel dual-gate MOS-FET FEATURES High forward transfer admittance Short channel transistor with high forward transfer admittance to input capacitance ratio Low noise gain controlled amplifier GHz. APPLICATIONS VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment ...

Page 3

... NXP Semiconductors N-channel dual-gate MOS-FET LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V drain-source voltage DS I drain current D I gate 1 current G1 I gate 2 current G2 P total power dissipation tot T storage temperature stg T operating junction temperature j Note 1 ...

Page 4

... NXP Semiconductors N-channel dual-gate MOS-FET THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to ambient th j-a R thermal resistance from junction to soldering point th j-s Notes 1. Device mounted on a printed-circuit board the temperature at the soldering point of the source lead. s STATIC CHARACTERISTICS 25 C; unless otherwise specified. ...

Page 5

... NXP Semiconductors N-channel dual-gate MOS-FET (mA C. T amb Fig.3 Transfer characteristics; typical values (mS 1600 1200 800 25 amb Fig.5 Drain current as a function of gate 1 voltage; typical values. ...

Page 6

... NXP Semiconductors N-channel dual-gate MOS-FET (mS − amb Fig.7 Forward transfer admittance as a function of gate 1 voltage; typical values. 2 (pF) 2.2 2.0 1.8 1.6 1.4 2.4 1.6 0 MHz G2-S amb Fig.9 Gate 1 input capacitance as a function of gate 1-source voltage ...

Page 7

... NXP Semiconductors N-channel dual-gate MOS-FET (mS G2 mA amb Fig.11 Input admittance as a function of the frequency; typical values (mS) ϕ G2 mA amb Fig.13 Forward transfer admittance and phase as a function of frequency ...

Page 8

... NXP Semiconductors N-channel dual-gate MOS-FET C1 5 Ω input 140 kΩ mS 0.5 mS nH; 4 turns 0.8 mm copper wire, internal diameter 4 mm 160 nH; 3 turns 0.8 mm copper wire, internal diameter 8 mm. Tapped at approximately half a turn from the cold side, to adjust G ...

Page 9

... NXP Semiconductors N-channel dual-gate MOS-FET V DD 140 kΩ 100 kΩ Ω input C1 2- 3 200 nH; 11 turns 0.5 mm copper wire, without spacing, internal diameter 3 mm cm, silvered 0.8 mm copper wire above ground plane cm, silvered 0.5 mm copper wire above ground plane. ...

Page 10

... NXP Semiconductors N-channel dual-gate MOS-FET PACKAGE OUTLINE Plastic surface-mounted package; reverse pinning; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 0.4 0.7 1.1 mm 0.1 0.8 0.3 0.5 OUTLINE VERSION IEC SOT343R 1997 Sep scale ...

Page 11

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...

Page 12

... NXP Semiconductors specifications such use shall be solely at customers own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 13

... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...

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