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BF998WR,115 Datasheet

Download or read online NXP Semiconductors BF998WR,115 Transistors RF MOSFET Small Signal TAPE-7 MOS-RFSS pdf datasheet.



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DATA SHEET
BF998WR
N-channel dual-gate MOS-FET
Product specification
Supersedes data of 1995 Apr 25
DISCRETE SEMICONDUCTORS
1997 Sep 05
Specifications of NXP Semiconductors BF998WR,115
Configuration:
Single Dual Gate
Continuous Drain Current:
30 mA
Current - Test:
10mA
Current Rating:
30mA
Drain-source Breakdown Voltage:
12 V
Frequency:
200MHz
Gain:
-
Gate-source Breakdown Voltage:
6 V
ID_COMPONENTS:
1949200
Lead Free Status / Rohs Status:
Lead free / RoHS Compliant
Maximum Operating Temperature:
+ 150 C
Minimum Operating Temperature:
- 65 C
Mounting Style:
SMD/SMT
Noise Figure:
0.6dB
Package / Case:
SOT-343R
Power - Output:
-
Power Dissipation:
300 mW
Series:
-
Transistor Polarity:
N-Channel
Transistor Type:
N-Channel Dual Gate
Voltage - Test:
8V
Product Category:
Transistors RF MOSFET Small Signal
RoHS:
yes
Drain-Source Breakdown Voltage:
12 V
Gate-Source Breakdown Voltage:
6 V
Factory Pack Quantity:
3000
Part # Aliases:
BF998WR T/R
Other Names:
934031450115::BF998WR T/R::BF998WR T/R

Summary of Contents

Page 1

DATA SHEET BF998WR N-channel dual-gate MOS-FET Product specification Supersedes data of 1995 Apr 25 DISCRETE SEMICONDUCTORS 1997 Sep 05 ...

Page 2

NXP Semiconductors N-channel dual-gate MOS-FET FEATURES High forward transfer admittance Short channel transistor with high forward transfer admittance to input capacitance ratio Low noise gain controlled amplifier GHz. APPLICATIONS VHF and UHF applications ...

Page 3

NXP Semiconductors N-channel dual-gate MOS-FET LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V drain-source voltage DS I drain current D I gate 1 current G1 I gate 2 current G2 P total power ...

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NXP Semiconductors N-channel dual-gate MOS-FET THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to ambient th j-a R thermal resistance from junction to soldering point th j-s Notes 1. Device mounted on a printed-circuit board the temperature ...

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NXP Semiconductors N-channel dual-gate MOS-FET (mA C. T amb Fig.3 Transfer characteristics; typical values (mS 1600 ...

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NXP Semiconductors N-channel dual-gate MOS-FET (mS − amb Fig.7 Forward transfer admittance as a function of gate 1 voltage; typical values. 2.4 ...

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NXP Semiconductors N-channel dual-gate MOS-FET (mS G2 mA amb Fig.11 Input admittance as ...

Page 8

NXP Semiconductors N-channel dual-gate MOS-FET C1 5 Ω input 140 kΩ mS 0.5 mS nH; 4 turns 0.8 mm copper wire, ...

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NXP Semiconductors N-channel dual-gate MOS-FET V DD 140 kΩ 100 kΩ Ω input C1 2- 3 ...

Page 10

NXP Semiconductors N-channel dual-gate MOS-FET PACKAGE OUTLINE Plastic surface-mounted package; reverse pinning; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 0.4 0.7 1.1 ...

Page 11

NXP Semiconductors N-channel dual-gate MOS-FET DATA SHEET STATUS DOCUMENT PRODUCT (1) STATUS STATUS Objective data sheet Development Preliminary data sheet Qualification Product data sheet Production Notes 1. Please consult the most recently issued document before initiating or completing a design. ...

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NXP Semiconductors N-channel dual-gate MOS-FET NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customers applications or products, or the application or use by ...

Page 13

NXP Semiconductors provides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, ...

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