C2655 Datasheet

Download or read online TOSHIBA Semiconductor C2655 TOSHIBA Transistor Silicon NPN Epitaxial Type pdf datasheet.



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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
Power Amplifier Applications
Power Switching Applications
Low saturation voltage: V
CE (sat)
High collector power dissipation: P
High-speed switching: t
= 1.0 μs (typ.)
stg
Complementary to 2SA1020.
Absolute Maximum Ratings
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
2SC2655
= 0.5 V (max) (I
= 1 A)
C
= 900 mW
C
(Ta = 25°C)
Symbol
Rating
Unit
V
50
V
CBO
V
50
V
CEO
V
5
V
EBO
I
2
A
C
I
0.5
A
B
P
900
mW
C
T
150
°C
j
T
−55 to 150
°C
stg
1
2SC2655
Industrial Applications
Unit: mm
JEDEC
TO-92MOD
JEITA
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
2006-11-09

Summary of Contents

Page 1

... 900 mW C (Ta 25°C) Symbol Rating Unit CBO CEO EBO 0 900 150 ° 55 to 150 °C stg 1 2SC2655 Industrial Applications Unit: mm JEDEC TO-92MOD JEITA TOSHIBA 2-5J1A Weight: 0.36 g (typ.) 2006-11-09 ...

Page 2

... I Input I t stg I 0.05 A, duty cycle ≤ Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2SC2655 Min Typ. Max 1.0 1.0 50 70 240 40 ...

Page 3

... Collector current I (A) C 1.0 0.8 0 0.4 0 0.4 (V) 1 0.8 0.6 0.4 40 0.2 0 2.0 2.4 0 0.4 1 0.5 0.3 0.1 0.05 0.02 0. 2SC2655 V – Common emitter Ta 25°C 0.8 1.2 1.6 2.0 2.4 Collector current I ( – Common emitter Ta 55°C 0.8 1.2 1.6 2.0 2.4 Collector current I ( – (sat) ...

Page 4

... V CEO max 0.01 0.2 0 Collector-emitter voltage V (V) CE 2.0 1 100°C 1.0 0 0.4 Base-emitter voltage V 1000 800 600 400 200 Ambient temperature Ta (°C) 100 4 2SC2655 I – Common emitter 55 0.8 1.2 1.6 2.0 ( – 120 160 200 240 2006-11-09 ...

Page 5

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2SC2655 20070701-EN 2006-11-09 ...

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