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W20NK70Z Datasheet

Download or read online STMicroelectronics W20NK70Z N-channel 700v - 0.25w - 20a To-247 Zener-protected Supermesh Tm Power Mosfet pdf datasheet.



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TYPE
V
R
DSS
DS(on)
STW20NK70Z
700 V
< 0.285
TYPICAL R
(on) = 0.25
DS
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES
ORDER CODES
PART NUMBER
STW20NK70Z
April 2004
N-CHANNEL 700V - 0.25 - 20A TO-247
Zener-Protected SuperMESH™ MOSFET
I
Pw
D
20 A
350 W
INTERNAL SCHEMATIC DIAGRAM
MARKING
PACKAGE
W20NK70Z
TO-247
STW20NK70Z
3
2
1
TO-247
PACKAGING
TUBE
1/9

Summary of Contents

Page 1

... APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES ORDER CODES PART NUMBER STW20NK70Z April 2004 N-CHANNEL 700V - 0.25 - 20A TO-247 Zener-Protected SuperMESH MOSFET 350 W INTERNAL SCHEMATIC DIAGRAM MARKING PACKAGE W20NK70Z TO-247 STW20NK70Z TO-247 PACKAGING TUBE 1/9 ...

Page 2

... STW20NK70Z ABSOLUTE MAXIMUM RATINGS Symbol V Drain-source Voltage ( Drain-gate Voltage (R DGR V Gate- source Voltage GS I Drain Current (continuous Drain Current (continuous Drain Current (pulsed Total Dissipation at T TOT Derating Factor V Gate source ESD(HBM-C100pF, R1.5K ESD(G-S) dv/dt (1) Peak Diode Recovery voltage slope ...

Page 3

... di/dt 100 A/µ 100 25° (see test circuit, Figure di/dt 100A/µ 100 150° (see test circuit, Figure 5) STW20NK70Z Min. Typ. Max. 700 125 °C 50 ±10 3 3.75 4.5 0.25 0.285 Min. Typ. Max 6000 ...

Page 4

... STW20NK70Z Safe Operating Area Output Characteristics Transconductance 4/9 Thermal Impedance Transfer Characteristics Static Drain-source On Resistance ...

Page 5

... Gate Charge vs Gate-source Voltage Normalized Gate Thereshold Voltage vs Temp. Source-drain Diode Forward Characteristics Capacitance Variations Normalized On Resistance vs Temperature Normalized BVDSS vs Temperature STW20NK70Z 5/9 ...

Page 6

... STW20NK70Z Maximum Avalanche Energy vs Temperature 6/9 ...

Page 7

... Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit STW20NK70Z 7/9 ...

Page 8

... STW20NK70Z DIM. MIN. A 4.85 A1 2.20 b 1.0 b1 2.0 b2 3.0 c 0.40 D 19.85 E 15. 14.20 L1 3.70 L2 øP 3.55 øR 4.50 S 8/9 TO-247 MECHANICAL DATA mm. TYP MAX. MIN. 5.15 0.19 2.60 0.086 1.40 0.039 2.40 0.079 3.40 0.118 0.80 0.015 20.15 0.781 15.75 0.608 5.45 14.80 0.560 4.30 0.14 18.50 3.65 0.140 5.50 0.177 5.50 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 0.214 0.582 0.17 0.728 0.143 0.216 ...

Page 9

... All other names are the property of their respective owners © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com STW20NK70Z 9/9 ...

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