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SLD322XT Datasheet

Download or read online Sony Electronics SLD322XT 0.5W High Power Laser Diode pdf datasheet.



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0.5W High Power Laser Diode
Description
The SLD322XT is a high power, gain-guided laser diode produced
1
by MOCVD method
. Compared to the SLD300 Series, this laser
diode has a high brightness output with a doubled optical density
which can be achived by QW-SCH structure
Fine adjustment of the oscillation wavelength is possible by controlling
the temperature using the built-in TE cooler (Peltier element).
1
MOCVD: Metal Organic Chemical Vapor Deposition
2
QW-SCH: Quantum Well Separate Confinement Heterostructure
Features
• High power
Recommended optical power output: Po = 0.5W
• Low operating current: Iop = 0.75A (Po = 0.5W)
• Flat package with built-in photodiode, TE cooler, and thermistor
Applications
• Solid state laser excitation
• Medical use
• Material processes
• Measurement
Structure
AlGaAs quantum well structure laser diode
Operating Lifetime
MTTF 10,000H (effective value) at Po = 0.5W, Tth = 25°C
Absolute Maximum Ratings (Tth = 25°C)
• Optical power output
• Reverse voltage
• Operating temperature (Tth)
• Storage temperature
Warranty
This warranty period shall be 90 days after receipt of the product or
1,000 hours operation time whichever is shorter.
Sony Quality Assurance Department shall analyze any product that
fails during said warranty period, and if the analysis results show
that the product failed due to material or manufacturing defects on
the part of Sony, the product shall be replaced free of charge.
Laser diodes naturally have differing lifetimes which follow a Weibull
distribution.
Special warranties are also available.
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
2
.
Po
0.55
W
V
LD
2
V
R
PD
15
V
Topr
–10 to +30
°C
Tstg
–40 to +85
°C
– 1 –
SLD322XT
Equivalent Circuit
TE Cooler
N
P
T
LD
PD
H
1
2
3
4
5
6
7
Pin Configuration (Top View)
No.
Function
1
TE cooler (negative)
2
Thermistor lead 1
3
Thermistor lead 2
4
Laser diode (anode)
5
Laser diode (cathode)
6
Photodiode (cathode)
7
Photodiode (anode)
8
TE cooler (positive)
1
8
E93206B02-PS
8

Summary of Contents

Page 1

... High Power Laser Diode Description The SLD322XT is a high power, gain-guided laser diode produced 1 by MOCVD method . Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be achived by QW-SCH structure Fine adjustment of the oscillation wavelength is possible by controlling the temperature using the built-in TE cooler (Peltier element) ...

Page 2

... SLD322XT-3 830 ± 10 Type Wavelength (nm) SLD322XT-21 798 ± 3 SLD322XT-24 807 ± 3 SLD322XT-25 810 ± 3 Handling Precautions Eye protection against laser beams The optical output of laser diodes ranges from several mW to 3W. However the optical power density of the laser beam at the diode chip 2 reaches 1MW/cm ...

Page 3

... Imon Monitor current [mA] Power dependence of far field pattern (Parallel to junction) Tth 500mW 400mW 300mW 200mW 100mW O 60 Angle [degree] (Parallel to junction 500mW O Tth 25 C Tth 10 C Tth 5 C 60 Angle [degree] SLD322XT 90 90 ...

Page 4

... 100 0 4 SLD322XT Dependence of wavelength Po 500mW Tth Thermistor temperature [ C] Thermistor characteristics Tth Thermistor temperature [ C] TE cooler characteristics 2 Tth 100 ...

Page 5

... Power dependence of spectrum 1.0 Tth 0.2W 0.8 0.6 0.4 0.2 796 798 800 Wavelength [nm] 1.0 Tth 0.4W 0.8 0.6 0.4 0.2 796 798 800 Wavelength [nm] 1.0 0.8 0.6 0.4 0.2 802 804 1.0 0.8 0.6 0.4 0.2 802 804 5 Tth 0.3W 796 798 800 802 804 Wavelength [nm] Tth 0.5W 796 798 800 802 804 Wavelength [nm] SLD322XT ...

Page 6

... Wavelength [nm] 1.0 0.8 0.6 0.4 0.2 785 790 795 800 Wavelength [nm] 1.0 Tth 10 C 0.8 0.6 0.4 0.2 805 810 815 1.0 Tth 25 C 0.8 0.6 0.4 0.2 805 810 815 6 Tth 0 C 785 790 795 800 805 Wavelength [nm] Tth 30 C 785 790 795 800 805 Wavelength [nm] SLD322XT 810 815 810 815 ...

Page 7

... R1.2 ± 0.3 Reference Plane SONY CODE EIAJ CODE JEDEC CODE M 273(LO 10) 0.05 33.0 ± 0.05 Window Ø5.0 Glass 38.0 ± 0.5 LD Chip 19.0 28.0 ± 0.5 16.5 ± 0.1 Distance between pilot hole and emittng area PACKAGE STRUCTURE M-273(LO-10) PACKAGE WEIGHT 7 8 Ø0.6 2.54 43g Sony Corporation SLD322XT ...

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