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BF994S,215 Datasheet

Download or read online NXP Semiconductors BF994S,215 Transistors RF MOSFET Small Signal N-CH DUAL GATE 20V VHF pdf datasheet.
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DISCRETE SEMICONDUCTORS
DATA SHEET
BF994S
N-channel dual-gate MOS-FET
Product specification
File under Discrete Semiconductors, SC07
July 1993
Specifications of NXP Semiconductors BF994S,215
Application:
VHF
Channel Mode:
Depletion
Channel Type:
N
Configuration:
Single Dual Gate
Continuous Drain Current:
0.03 A
Current - Test:
10mA
Current Rating:
30mA
Drain Source Voltage (max):
20V
Drain-source Breakdown Voltage:
20 V
Frequency:
200MHz
Gain:
25dB
Gate-source Breakdown Voltage:
+/- 6 V
ID_COMPONENTS:
1949189
Input Capacitance (typ)@vds:
2.5@15V@Gate 1/1.2@15V@Gate 2pF
Lead Free Status / Rohs Status:
Lead free / RoHS Compliant
Maximum Operating Temperature:
+ 150 C
Minimum Operating Temperature:
- 65 C
Mounting:
Surface Mount
Mounting Style:
SMD/SMT
Noise Figure:
1dB
Noise Figure (max):
1(Typ)dB
Number Of Elements:
1
Operating Temp Range:
-65C to 150C
Output Capacitance (typ)@vds:
1@15VpF
Package / Case:
SOT-143, SOT-143B, TO-253AA
Package Type:
SOT
Pin Count:
3 +Tab
Power - Output:
-
Power Dissipation:
200 mW
Power Dissipation (max):
200mW
Power Gain (typ)@vds:
25@15VdB
Reverse Capacitance (typ):
0.025@15VpF
Screening Level:
Military
Series:
-
Transistor Polarity:
N-Channel
Transistor Type:
N-Channel Dual Gate
Voltage - Rated:
20V
Voltage - Test:
15V
Product Category:
Transistors RF MOSFET Small Signal
RoHS:
yes
Drain-Source Breakdown Voltage:
20 V
Gate-Source Breakdown Voltage:
+/- 6 V
Factory Pack Quantity:
3000
Part # Aliases:
BF994S T/R
Other Names:
568-1972-2, 933754970215, BF994S T/R

Summary of Contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET BF994S N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 July 1993 ...

Page 2

Philips Semiconductors N-channel dual-gate MOS-FET FEATURES Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS VHF applications such as: VHF television tuners Professional communication equipment. PINNING PIN SYMBOL source ...

Page 3

Philips Semiconductors N-channel dual-gate MOS-FET LIMITING VALUES In according with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V drain-source voltage DS I drain current (DC average drain current D(AV) I gate 1-source current G1-S I gate ...

Page 4

Philips Semiconductors N-channel dual-gate MOS-FET STATIC CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER I gate 1 cut-off currents G1-SS I gate 2 cut-off currents G2-SS V gate 1-source breakdown voltage I (BR)G1-SS V gate 2-source breakdown ...

Page 5

Philips Semiconductors N-channel dual-gate MOS-FET PACKAGE OUTLINE handbook, full pagewidth 0.75 0. max 1.1 max Dimensions in mm. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This ...

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