Silicon N Channel MOSFET Tetrode
Features
Short-channel transistor
with high S/C quality factor
For low-noise, gain-controlled
input stages up to 1 GHz
Type
Marking
BF 998
MO
Maximum Ratings
Parameter
Drain-source voltage
Drain current
Gate 1/gate 2 peak source current
Total power dissipation, T
S
Storage temperature range
Channel temperature
Thermal Resistance
Junction - soldering point
1)
For detailed information see chapter Package Outlines.
Semiconductor Group
Ordering Code
(tape and reel)
Q62702-F1129
Symbol
V
DS
I
D
I
G1/2SM
< 76 ˚C
P
tot
T
stg
T
ch
R
th JS
1
Pin Configuration
Package
1
2
3
4
S
D
G
G
SOT-143
2
1
Values
Unit
12
V
30
mA
10
200
mW
– 55 … + 150 ˚C
150
< 370
K/W
BF 998
1)
04.96
Comments to this Datasheet