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BF998 Datasheet

Download or read online Siliconix BF998 N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode pdf datasheet.



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Not for new design, this product will be obsoleted soon
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Features
• Integrated gate protection diodes
• Low noise figure
• Low feedback capacitance
• High cross modulation performance
• Low input capacitance
• High AGC-range
• High gain
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
• Input and mixer stages in UHF tuners
Mechanical Data
Typ: BF998
Case: SOT143 Plastic case
Weight: approx. 8.0 mg
Marking: MO
Pinning:
1 = Source, 2 = Drain,
3 = Gate 2, 4 = Gate 1
Typ: BF998R
Case: SOT143R Plastic case
Weight: approx. 8.0 mg
Marking: MOR
Parts Table
Part
BF998
BF998A
BF998R
BF998RA
BF998RAW-GS08 or
BF998RW
BF998RBW-GS08
BF998RAW-GS08
BF998RAW
BF998RBW
BF998RBW-GS08
Document Number 85011
Rev. 1.8, 05-Sep-08
BF998/BF998R/BF998RW
2
e3
3
1
4
1
4
Pinning:
1 = Source, 2 = Drain,
3 = Gate 2, 4 = Gate 1
Typ: BF998RW
Case: SOT343R Plastic case
Weight: approx. 6.0 mg
Marking: WMO
Pinning:
1 = Source, 2 = Drain,
3 = Gate 2, 4 = Gate 1
Ordering code
Type Marking
BF998A-GS08
MO
BF998A-GS08
MO
BF998RA-GS08
MOR
BF998RA-GS08
MOR
WMO
WMO
WMO
Vishay Semiconductors
1
SOT143
4
2
SOT143R
3
2
SOT343R
3
19216
Electrostatic sensitive device.
Observe precautions for handling.
Remarks
SOT143
SOT143
SOT143R
SOT143R
SOT343R
SOT343R
SOT343R
www.vishay.com
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Summary of Contents

Page 1

... High gain Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications Input and mixer stages in UHF tuners Mechanical Data Typ: BF998 Case: SOT143 Plastic case Weight: approx. 8.0 mg Marking: MO Pinning Source Drain Gate Gate 1 Typ: BF998R Case: SOT143R Plastic case Weight: approx ...

Page 2

... V G1S ± I G2S ± I G1S DS BF998/ BF998R/ BF998RW BF998A/ G1S G2S BF998RA/ BF998RAW BF998RBW 20 μ G2S μ G1S D Test condition Symbol Min 21s C issg1 G2S ...

Page 3

... Document Number 85011 Rev. 1.8, 05-Sep-08 BF998/BF998R/BF998RW Test condition Symbol Min. 0.5 mS 200 MHz 800 MHz Δ 0.5 mS 200 MHz 1 mS 800 MHz S21 ANG ...

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... BF998/BF998R/BF998RW Vishay Semiconductors Typical Characteristics °C, unless otherwise specified amb 300 250 200 150 100 100 120 140 160 T - Ambient Temperature (°C) 96 12159 amb Figure 1. Total Power Dissipation vs. Ambient Temperature G2S V 25 G1S ...

Page 5

... V G2S 100...1300 MHz 2 100 MHz 12820 (mS) 11 Figure 9. Short Circuit Input Admittance Document Number 85011 Rev. 1.8, 05-Sep-08 BF998/BF998R/BF998RW 100...1300 MHz - 1.0 1.5 0 12821 Figure 10 ...

Page 6

... BF998/BF998R/BF998RW Vishay Semiconductors mA G2S j0.5 j0.2 0 0.2 0 j0.2 1300 MHz 1000 - j0 12960 Figure 12. Input Reflection Coefficient S 12 90° 120° 60° 150 ° 1200 1300 MHz 200 100 180 ° 0.08 - 150° - 120° - 60° - 90° ...

Page 7

... Package Dimensions in millimeters (inches) 3 [0.118] 2.8 [0.110] 0.5 [0.020] 0.35 [0.014] 0.5 [0.020] 0.35 [0.014] 2 [0.079] 1.8 [0.071] 96 12240 Package Dimensions in millimeters (inches) 96 12239 Document Number 85011 Rev. 1.8, 05-Sep-08 BF998/BF998R/BF998RW : SOT143 0.5 [0.020] 2.6 [0.102] 0.35 [0.014] 2.35 [0.093] 1.8 [0.071] 1.6 [0.063] 0.9 [0.035] 0.75 [0.030] foot print recommendation: 1.7 [0.067] 0.8 [0.031] 0.8 [0.031] 1.9 [0.075] : SOT143R Vishay Semiconductors 1 ...

Page 8

... BF998/BF998R/BF998RW Vishay Semiconductors Package Dimensions in millimeters (inches) 96 12238 www.vishay.com 8 : SOT343R Document Number 85011 Rev. 1.8, 05-Sep-08 ...

Page 9

... Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85011 Rev. 1.8, 05-Sep-08 BF998/BF998R/BF998RW and may do so without further notice. Vishay Semiconductors www.vishay.com 9 ...

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All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay), disclaim any and all liability for any errors, inaccuracies or ...

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