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W20NM60 Datasheet - Page 3

Download or read online STMicroelectronics W20NM60 N-channel 600v - 0.25ohm - 20a To-220/fp/d2pak/i2pak Mdmesh Power Mosfet pdf datasheet.



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STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Symbol
Parameter
g
(1)
Forward Transconductance
fs
C
Input Capacitance
iss
Output Capacitance
C
oss
Reverse Transfer
C
rss
Capacitance
C
(3)
Equivalent Output
oss eq.
Capacitance
t
Turn-on Delay Time
d(on)
Rise Time
t
r
Turn-off Delay Time
t
d(off)
Fall Time
t
f
Cross-over Time
t
c
Q
Total Gate Charge
g
Q
Gate-Source Charge
gs
Q
Gate-Drain Charge
gd
R
Gate Input Resistance
g
Table 8: Source Drain Diode
Symbol
Parameter
I
Source-drain Current
SD
I
(2)
Source-drain Current (pulsed)
SDM
V
(1)
Forward On Voltage
SD
t
Reverse Recovery Time
rr
Q
Reverse Recovery Charge
rr
Reverse Recovery Current
I
RRM
t
Reverse Recovery Time
rr
Q
Reverse Recovery Charge
rr
I
Reverse Recovery Current
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
V
.
DSS
Test Conditions
Min.
V
> I
x R
DS
D(on)
DS(on)max,
I
= 10 A
D
V
= 25V, f = 1 MHz, V
= 0
DS
GS
V
= 0V, V
= 0V to 400 V
GS
DS
V
= 200 V, I
= 10 A
DD
D
R
= 4.7
V
= 10 V
G
GS
(Resistive Load see, Figure 3)
V
= 480 V, I
= 20 A
DD
D
(See test circuit, Figure 5)
V
= 400 V, I
= 20 A,
DD
D
V
= 10V
GS
f = 1 MHz Gate DC Bias = 0
Test Signal Level = 20 mV
Open Drain
Test Conditions
Min.
I
= 20 A, V
= 0
SD
GS
I
=20 A, di/dt = 100 A/µs
SD
V
= 100 V, T
= 25°C
DD
j
(see test circuit, Figure 5)
I
=20 A, di/dt = 100 A/µs
SD
V
= 100 V, T
= 150°C
DD
j
(see test circuit, Figure 5)
Typ.
Max.
Unit
11
S
1500
pF
350
pF
35
pF
215
pF
25
ns
20
ns
6
ns
11
ns
21
ns
54
39
nC
10
nC
20
nC
1.6
Typ.
Max.
Unit
20
A
80
A
1.5
V
390
ns
5
µC
25
A
510
ns
6.5
µC
26
A
when V
increases from 0 to 80%
oss
DS
3/15

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