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W20NM60 Datasheet - Page 2

Download or read online STMicroelectronics W20NM60 N-channel 600v - 0.25ohm - 20a To-220/fp/d2pak/i2pak Mdmesh Power Mosfet pdf datasheet.



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STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1
Table 3: Absolute Maximum ratings
Symbol
Parameter
V
Drain-source Voltage (V
DS
V
Drain-gate Voltage (R
DGR
GS
V
Gate- source Voltage
GS
I
Drain Current (continuous) at T
D
I
Drain Current (continuous) at T
D
I
( )
Drain Current (pulsed)
DM
P
Total Dissipation at T
TOT
C
Derating Factor
dv/dt (1)
Peak Diode Recovery voltage slope
V
Insulation Winthstand Voltage (DC)
ISO
T
Storage Temperature
stg
T
Max. Operating Junction Temperature
j
( ) Pulse width limited by safe operating area
I
V
V
(1)
20 A, di/dt
400 A/µs,
SD
DD
(*) Limited only by maximum temperature allowed
Table 4: Thermal Data
Rthj-case
Thermal Resistance Junction-case Max
Rthj-amb
Thermal Resistance Junction-ambient Max
T
Maximum Lead Temperature For Soldering Purpose
l
Table 5: Avalanche Characteristics
Symbol
Parameter
I
Avalanche Current, Repetitive or Not-Repetitive
AR
(pulse width limited by T
E
Single Pulse Avalanche Energy
AS
(starting T
= 25 °C, I
j
D
ELECTRICAL CHARACTERISTICS (T
Table 6: On/Off
Symbol
Parameter
V
Drain-source
(BR)DSS
Breakdown Voltage
I
Zero Gate Voltage
DSS
Drain Current (V
= 0)
GS
I
Gate-body Leakage
GSS
Current (V
= 0)
DS
V
Gate Threshold Voltage V
GS(th)
R
Static Drain-source On
DS(on)
Resistance
2/15
= 0)
GS
= 20 k )
= 25°C
C
= 100°C
C
= 25°C
T
T
(BR)/DSS,
j
JMAX
max)
j
= I
, V
= 50 V)
AR
DD
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
Test Conditions
I
= 250 µA, V
= 0
D
GS
V
= Max Rating
DS
V
= Max Rating, T
= 125°C
DS
C
V
= ± 30V
GS
= V
, I
= 250 µA
DS
GS
D
V
= 10V, I
= 10 A
GS
D
Value
TO-220/D²PAK/
TO-220FP
I²PAK/TO-247
600
600
±30
20
20 (*)
12.6
12.6 (*)
80
80 (*)
192
45
1.2
0.36
15
--
2500
-65 to 150
150
TO-220/D²PAK/
TO-220FP
I²PAK/TO-247
0.65
2.8
62.5
300
Max. Value
10
650
Min.
Typ.
Max.
600
1
10
±100
3
4
5
0.25
0.29
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
°C
°C
Unit
°C/W
°C/W
°C
Unit
A
mJ
Unit
V
µA
µA
µA
V

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