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51W17800 Datasheet - Page 8

Download or read online Hitachi Semiconductor 51W17800 2,097,152-word × 8-bit Dynamic Ram pdf datasheet.



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HM51W17800 Series
Read, Write, Read-Modify-Write and Refresh Cycles (Common parameters)
Parameter
Random read or write cycle time
RAS precharge time
CAS precharge time
RAS pulse width
CAS pulse width
Row address setup time
Row address hold time
Column address setup time
Column address hold time
RAS to CAS delay time
RAS to column address delay time
RAS hold time
CAS hold time
CAS to RAS precharge time
OE to Din delay time
OE delay time from Din
CAS delay time from Din
Transition time (rise and fall)
8
HM51W17800
-5
-6
Symbol
Min
Max
Min
t
90
110
RC
t
30
40
RP
t
8
10
CP
t
50
10000 60
RAS
t
13
10000 15
CAS
t
0
0
ASR
t
8
10
RAH
t
0
0
ASC
t
8
10
CAH
t
18
37
20
RCD
t
13
25
15
RAD
t
13
15
RSH
t
50
60
CSH
t
5
5
CRP
t
13
15
OED
t
0
0
DZO
t
0
0
DZC
t
3
50
3
T
-7
Max
Min
Max
Unit
Notes
130
ns
50
ns
10
ns
10000 70
10000 ns
10000 18
10000 ns
0
ns
10
ns
0
ns
15
ns
45
20
52
ns
3
30
15
35
ns
4
18
ns
70
ns
5
ns
18
ns
5
0
ns
6
0
ns
6
50
3
50
ns
7

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