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51W17800 Datasheet - Page 10

Download or read online Hitachi Semiconductor 51W17800 2,097,152-word × 8-bit Dynamic Ram pdf datasheet.



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HM51W17800 Series
Read-Modify-Write Cycle
Parameter
Read-modify-write cycle time
RAS to WE delay time
CAS to WE delay time
Column address to WE delay time
OE hold time from WE
Refresh Cycle
Parameter
CAS setup time (CBR refresh cycle) t
CAS hold time (CBR refresh cycle) t
WE setup time (CBR refresh cycle) t
WE hold time (CBR refresh cycle)
RAS precharge to CAS hold time
Fast Page Mode Cycle
Parameter
Fast page mode cycle time
Fast page mode RAS pulse width
Access time from CAS precharge
RAS hold time from CAS precharge t
10
HM51W17800
-5
-6
Symbol
Min
Max
Min
t
131
155
RWC
t
73
85
RWD
t
36
40
CWD
t
48
55
AWD
t
13
15
OEH
HM51W17800
-5
-6
Symbol
Min
Max
Min
5
5
CSR
8
10
CHR
0
0
WRP
t
8
10
WRH
t
5
5
RPC
HM51W17800
-5
-6
Symbol
Min Max
Min Max
t
35
40
PC
t
100000 —
100000 —
RASP
t
30
35
CPA
30
35
CPRH
-7
Max
Min
Max
Unit
Notes
181
ns
98
ns
14
46
ns
14
63
ns
14
18
ns
-7
Max
Min
Max
Unit
Notes
5
ns
10
ns
0
ns
10
ns
5
ns
-7
Min Max
Unit
Notes
45
ns
100000 ns
16
40
ns
9, 17
40
ns

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