US1M-T3 Datasheet

Download or read online WTE (Won-Top Electronics) US1M-T3 1.0A Surface Mount Glass Passivated Ultrafast Diode pdf datasheet.



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WTE
POWER SEMICONDUCTORS
Features
Glass Passivated Die Construction
Ideally Suited for Automatic Assembly
Low Forward Voltage Drop, High Efficiency
Surge Overload Rating to 30A Peak
Low Power Loss
Ultra-Fast Recovery Time
Plastic Case Material has UL Flammability
Classification Rating 94V-O
Mechanical Data
Case: SMA/DO-214AC, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
Weight: 0.064 grams (approx.)
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
Maximum Ratings and Electrical Characteristics
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @T
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
@I
Peak Reverse Current
@T
At Rated DC Blocking Voltage
@T
Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
Note: 1. Measured with I
= 0.5A, I
= 1.0A, I
F
R
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm
US1A – US1M
1.0A SURFACE MOUNT GLASS PASSIVATED ULTRAFAST DIODE
A
C
Symbol
US1A
US1B
V
RRM
V
50
RWM
V
R
V
35
R(RMS)
= 100° C
I
O
L
I
FSM
= 1.0A
V
FM
F
= 25° C
A
I
RM
= 100° C
A
t
rr
C
j
R
JL
T
T
j,
STG
= 0.25A. See figure 5.
rr
2
land area.
1 of 4
US1A – US1M
B
F
H
SMA/DO-214AC
Dim
Min
A
2.50
B
4.00
C
1.20
D
0.152
E
4.80
F
2.00
G
0.051
H
0.76
All Dimensions in mm
@T
=25° C unless otherwise specified
A
US1D
US1G
US1J
US1K
100
200
400
600
800
70
140
280
420
560
1.0
30
1.0
1.4
10
500
50
75
15
30
-50 to +150
© 2006 Won-Top Electronics
Pb
D
G
E
Max
2.90
4.60
1.60
0.305
5.28
2.44
0.203
1.52
US1M
Unit
1000
V
700
V
A
A
1.7
V
µA
100
nS
pF
° C/W
° C
Specifications of WTE (Won-Top Electronics) US1M-T3
DC Blocking Voltage VR:
1000V

Summary of Contents

Page 1

... Typical Thermal Resistance (Note 3) Operating and Storage Temperature Range Note: 1. Measured with I 0.5A 1.0A Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. 3. Mounted on P.C. Board with 8.0mm US1A US1M 1.0A SURFACE MOUNT GLASS PASSIVATED ULTRAFAST DIODE A C Symbol US1A US1B V RRM ...

Page 2

... Fig. 2 Typical Forward Characteristics 100 T 100 1 0.1 0. PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 4 Typical Reverse Characteristics t rr 0.5A 0A -0.25A -1.0A Set time base for 10ns/cm © 2006 Won-Top Electronics US1G US1J - US1M Pulse Width 300 s 1.6 2.0 100 120 140 ...

Page 3

... Reel Diameter Quantity (mm) (PCS) 330 7,500 Note: 1. Paper reel, white or gray color. 2. Components are packed in accordance with EIA standard 481-1 and 481-2. US1A US1M RECOMMENDED FOOTPRINT 0.050 MIN (1.27 MIN) 12mm Product ID Label Inner Box Size Quantity Carton Size (mm) ...

Page 4

... US1D-T3 US1G-T3 US1J-T3 US1K-T3 US1M- Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes correct and accurate. However, WTE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to manufacturer ...

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