EFS1J-T3 Datasheet

Download or read online WTE (Won-Top Electronics) EFS1J-T3 1.0A Low VF Surface Mount Glass Passivated Superfast Diode pdf datasheet.



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WTE
POWER SEMICONDUCTORS
Features

Glass Passivated Die Construction

Ideally Suited for Automatic Assembly

Low Forward Voltage Drop, High Efficiency

Surge Overload Rating to 30A Peak

Low Power Loss

Super-Fast Recovery Time

Plastic Case Material has UL Flammability
Classification Rating 94V-O
                                                                                     E
Mechanical Data

Case: SMA/DO-214AC, Molded Plastic

Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.064 grams (approx.)

Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
Maximum Ratings and Electrical Characteristics
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
Note: 1. Measured with I
= 0.5A, I
= 1.0A, I
F
R
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm
EFS1J
1.0A LOW VF SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE
A
C
@T
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
@T
= 75° C
I
O
L
I
FSM
@I
= 1.0A
V
FM
F
@T
= 25° C
A
I
RM
@T
= 100° C
A
t
rr
C
j
R
JL
T
T
j,
STG
= 0.25A. See figure 5.
rr
2
land area.
1 of 4
EFS1J
B
F
H
SMA/DO-214AC
Dim
Min
Max
A
2.50
2.90
B
4.00
4.60
C
1.20
1.60
D
0.152
0.305
E
4.80
5.28
F
2.00
2.44
G
0.051
0.203
0.76
1.52
H
All Dimensions in mm
=25° C unless otherwise specified
A
EFS1J
600
420
1.0
30
1.25
5.0
100
50
8
35
-65 to +150
© 2006 Won-Top Electronics
Pb
D
G
Unit
V
V
A
A
V
µA
nS
pF
° C/W
° C
Specifications of WTE (Won-Top Electronics) EFS1J-T3
DC Blocking Voltage VR:
600V

Summary of Contents

Page 1

... EFS1J SMA/DO-214AC Dim Min Max A 2.50 2.90 B 4.00 4.60 C 1.20 1.60 D 0.152 0.305 E 4.80 5.28 F 2.00 2.44 G 0.051 0.203 0.76 1.52 H All Dimensions in mm 25° C unless otherwise specified A EFS1J 600 420 1.0 30 1.25 5.0 100 -65 to 150 © 2006 Won-Top Electronics Unit µ ° C/W ° C ...

Page 2

... Fig. 3 Pea Forward Surge Current 50 NI (Non-inductive) Device Under Test () 50V DC Approx (-) 1.0 NI Notes: 1. Rise Time 7.0ns max. Input Impedance 1.0M , 22pF. 2. Rise Time 10ns max. Input Impedance 50 . EFS1J 100 125 150 175 ( C) Pulse width 8.3 ms single half-sine-wave (JEDEC method) 100 10 NI (-) Pulse Generator ...

Page 3

... Reel Diameter Quantity (mm) (PCS) 330 7,500 Note: 1. Paper reel, white or gray color. 2. Components are packed in accordance with EIA standard 481-1 and 481-2. EFS1J RECOMMENDED FOOTPRINT 0.050 MIN (1.27 MIN) 12mm Product ID Label Inner Box Size Quantity Carton Size (mm) ...

Page 4

... Shipping quantity given is for minimum packing quantity only. For minimum order quantity, please consult the Sales Department. To order RoHS / Lead Free version (with Lead Free finish), add -LF suffix to part number above. For example, EFS1J-T3-LF. We power your everyday Shipping Quantity 7500/Tape & ...

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