B2S-T3-LF Datasheet

Download or read online WTE (Won-Top Electronics) B2S-T3-LF 0.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE pdf datasheet.



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WTE
POWER SEMICONDUCTORS
Features
Glass Passivated Die Construction
Low Forward Voltage Drop
High Current Capability
High Surge Current Capability
Designed for Surface Mount Application
Plastic Material – UL Flammability 94V-O
Recognized File # E157705
Mechanical Data
Case: MB-S, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Case
Weight: 0.12 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (Note 1) @T
Average Rectified Output Current (Note 2) @T
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
2
I
t Rating for Fusing (t < 8.3ms)
Forward Voltage per element
Peak Reverse Current
At Rated DC Blocking Voltage
Typical Junction Capacitance per leg (Note 3)
Typical Thermal Resistance per leg (Note 1)
Operating and Storage Temperature Range
Note: 1. Mounted on glass epoxy PC board with 1.3mm
2. Mounted on aluminum substrate PC board with 1.3mm
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
B1S – B10S
0.5A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
-
B
~
J
@T
Symbol
B1S
V
RRM
V
100
RWM
V
R
V
70
R(RMS)
= 40°C
A
I
O
= 40°C
A
I
FSM
2
I
t
@I
= 0.5A
V
FM
F
@T
= 25°C
A
I
RM
@T
= 125°C
A
C
j
R
θJA
R
θJL
T
, T
j
STG
2
solder pad.
2
solder pad.
1 of 4
B1S – B10S
G
H
+
D
~
C
A
MB-S
L
Dim
Min
A
4.50
B
3.80
C
0.15
D
K
E
G
0.70
H
1.30
J
2.30
K
2.30
L
All Dimensions in mm
=25°C unless otherwise specified
A
B2S
B4S
B6S
B8S
200
400
600
800
140
280
420
560
0.5
0.8
30
5.0
1.0
5.0
500
25
85
20
-55 to +150
© 2006 Won-Top Electronics
Pb
E
Max
4.90
4.20
0.35
0.20
7.00
1.10
1.70
2.70
2.70
3.00
B10S
Unit
1000
V
700
V
A
A
2
A
s
V
µA
pF
°C/W
°C
Specifications of WTE (Won-Top Electronics) B2S-T3-LF
Mfr Package Description:
ROHS COMPLIANT, PLASTIC, MB-S, 4 PIN
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Surface Mount:
Yes
Terminal Form:
GULL WING
Terminal Position:
DUAL
Number of Terminals:
4
Package Body Material:
PLASTIC/EPOXY
Configuration:
BRIDGE, 4 ELEMENTS
Number of Elements:
4
Diode Element Material:
SILICON
Diode Type:
BRIDGE RECTIFIER DIODE
Number of Phases:
1
Breakdown Voltage-Min:
200 V
Average Output Current-Max:
0.5000 A
Rep Pk Reverse Voltage-Max:
200 V
Non-rep Pk Forward Current-Max:
30 A

Summary of Contents

Page 1

... C A MB-S L Dim Min A 4.50 B 3.80 C 0.15 D — G 0.70 H 1.30 J 2.30 K 2.30 L All Dimensions in mm 25°C unless otherwise specified A B2S B4S B6S B8S 200 400 600 800 140 280 420 560 0.5 0.8 30 5.0 1.0 5.0 500 -55 to 150 © 2006 Won-Top Electronics Pb E Max 4.90 4.20 0.35 0.20 7 ...

Page 2

Glass Epoxy PC Board 0.2 Resistive or Inductive Load AMBIENT TEMPERATURE ( C) A Fig. 1 Output Current Derating Curve ° A Single Half ...

Page 3

MARKING INFORMATION - WTE Manufacturers Logo BxS Device Number Polarity As Marked on Body PACKAGING INFORMATION TAPE & REEL 330mm Reel Diameter ...

Page 4

... Product No. B1S-T3 B2S-T3 B4S-T3 B6S-T3 B8S-T3 B10S- Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes correct and accurate. However, WTE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to manufacturer ...

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