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P1212ATF Datasheet

Download or read online Niko Semiconductor P1212ATF N-channel Enhancement Mode Field Effect Transistor pdf datasheet.
Also see for P1212ATF: Datasheet #2 (6 pages)



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NIKO-SEM
PRODUCT SUMMARY
V
R
(BR)DSS
DS(ON)
120
44A
12mΩ
ABSOLUTE MAXIMUM RATINGS (T
PARAMETERS/TEST CONDITIONS
Gate-Source Voltage
Continuous Drain Current
1
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Power Dissipation
Operating Junction & Storage Temperature Range
1
Lead Temperature (
/
” from case for 10 sec.)
16
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
Case-to-Heatsink
1
Pulse width limited by maximum junction temperature.
Duty cycle ≤ 1%
2
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
1
On-State Drain Current
REV 1.0
N-Channel Enhancement Mode
Field Effect Transistor
D
I
D
G
S
= 25 °C Unless Otherwise Noted)
C
T
= 25 °C
C
T
= 100 °C
C
L = 0.3mH
T
= 25 °C
C
T
= 100 °C
C
SYMBOL
TYPICAL
R
θJC
R
θJA
R
θCS
= 25 °C, Unless Otherwise Noted)
C
SYMBOL
TEST CONDITIONS
STATIC
V
V
= 0V, I
(BR)DSS
GS
V
V
= V
GS(th)
DS
GS
I
V
= 0V, V
GSS
DS
V
= 96V, V
DS
I
DSS
V
= 96V, V
DS
GS
I
V
= 10V, V
D(ON)
DS
1
P1212ATF
Halogen-Free & Lead- Free
SYMBOL
LIMITS
V
±20
GS
44
I
D
28
I
180
DM
I
34
As
E
80
AS
43.8
P
D
17.5
T
, T
-55 to 150
j
stg
T
275
L
MAXIMUM
2.85
62.5
0.5
LIMITS
MIN TYP MAX
120
= 250μA
D
1.5
2.3
, I
= 250μA
D
= ±20V
GS
= 0V
GS
= 0V, T
= 125 °C
J
= 10V
180
GS
TO-220F
1. GATE
2. DRAIN
3. SOURCE
UNITS
V
A
mJ
W
°C
UNITS
°C / W
UNIT
V
4.0
±250
nA
1
μA
10
A
May-18-2009

Summary of Contents

Page 1

... STATIC 0V, I (BR)DSS GS(th 0V, V GSS 96V DSS V 96V 10V, V D(ON P1212ATF Halogen-Free & Lead- Free SYMBOL LIMITS V ± 180 43 17 -55 to 150 j stg T 275 L MAXIMUM 2 ...

Page 2

... Reverse Recovery Charge Pulse test : Pulse Width 300 μsec, Duty Cycle 2% Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH P1212ATF, DATE CODE or LOT # . REV 1.0 N-Channel Enhancement Mode Field Effect Transistor R V ...

Page 3

... NIKO-SEM REV 1.0 N-Channel Enhancement Mode Field Effect Transistor 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0. P1212ATF Halogen-Free & Lead- Free On-Resistance vs.Drain Current 10V Drain Current(A) D Typical Source-Drain Diode Forward Voltage 1000 100 10 T 150° 0.1 0.0 0.2 0.4 0.6 0.8 1 Source-to-Drain Voltage(V) ...

Page 4

... DC 510 410 310 210 110 10 0.0001 100 1000 4 P1212ATF Halogen-Free & Lead- Free ita tic lta ...

Page 5

... REV 1.0 N-Channel Enhancement Mode Field Effect Transistor Transient Thermal Response Curve single pulse - ,Square Wave Pulse Duration[sec P1212ATF TO-220F Halogen-Free & Lead- Free Note : 1. R 2.85°C/W Max. θ Duty Factor, D (t) θ ...

Page 6

... NIKO-SEM TO-220F (3-Lead) MECHANICAL DATA REV 1.0 N-Channel Enhancement Mode Field Effect Transistor 6 P1212ATF TO-220F Halogen-Free & Lead- Free May-18-2009 ...

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